Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr2-800-udimm-4gb-1x-dr 2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB)

2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB) Brand Hynix

This 16GB (1x 16GB) DDR4 2400 MT/s Dual rank

M378B5773DH0-CH9 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT/s 240-pin EUDIMM RAM module from Samsung

Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr2-800-udimm-4gb-1x-dr 2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB)Product Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.