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Samsung 8GB (1x 8GB) CL15 DDR4-2133 PC4-17000 1.2V 288-pin UDIMM RAM Module Voltage_2.5V HMT125S6AFP8C-G7 Capacity 2GB (1x 2GB)

SKU 81196056917
4.6
USD108.99 USD144.99

Pay in 4 interest-free payments of $27.25 Learn more

Shipping Estimate
USA
  • USA
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Ships within 48 hours · Estimated delivery Aug 28 - Sep 2

Description

HMT125S6AFP8C-G7 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR3L 1333 MT/s 240-pin RDIMM RAM module from Hynix

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2133 MT/s 288-pin RDIMM RAM module from Samsung

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1600 MT/s 240-pin EUDIMM RAM module from Micron

Samsung 8GB (1x 8GB) CL15 DDR4-2133 PC4-17000 1.2V 288-pin UDIMM RAM Module Voltage_2.5V HMT125S6AFP8C-G7 Capacity 2GB (1x 2GB)Product Overview This 8GB (1x 8GB) DDR4 2133 MT s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL15, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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