Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V ECC 240-pin EUDIMM RAM Module Year_2012 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Single rank Configuration 1024M x8 Pieces in Kit 1 Compatibility

2xOWC1867DDR3S16G Capacity 32GB (2x 16GB) Brand OWC Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1

M392A2K43BB0-CPB Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

CT4G3S1067M-OB Capacity 4GB (1x 4GB) Brand Crucial Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1

Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V ECC 240-pin EUDIMM RAM Module Year_2012 2V Technology DDR4 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1333 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed