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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL11 Configuration 1024M x8 Pieces in Kit 2 Compatibility
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 1024M x8 Pieces in Kit 2 Compatibility
HMT125U6TFR8C-H9 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
5V Technology DDR Error Correction Non-ECC Signal Processing Unbuffered Form Factor 200-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility
Samsung 8GB (1x 8GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-32gb-2x-dr 5V Technology DDR3L Error CorrectionProduct Overview This 8GB (1x 8GB) DDR3 1600 MT s Dual rank, x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
