Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1866-sodimm-4gb-1x-sr 5V Technology DDR3L Error Correction

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 36-chip 512Mx4 Pieces in Kit 2

M393B5170DZ1-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

RM1849 Capacity 16GB (1x 16GB) Brand Ramcity using Micron chips Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1866-sodimm-4gb-1x-sr 5V Technology DDR3L Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.