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Ships within 48 hours · Estimated delivery Aug 19 - Aug 24
Pay in 4 interest-free payments of $9.75 Learn more
Ships within 48 hours · Estimated delivery Aug 19 - Aug 24
5V Technology DDR Error Correction ECC Signal Processing Registered Form Factor 184-pin RDIMM Ranks Dual rank CAS Latency CL3 Configuration x4 Pieces in Kit 1 Compatibility
5V Technology DDR3L Error Correction ECC Signal Processing Load Reduced Form Factor 240-pin LRDIMM Ranks Quad rank Configuration x4 Pieces in Kit 1 Compatibility
2xHYMD512646CP8J-D43 Capacity 2GB (2x 1GB) Brand Hynix Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1
M471B5173DB0-YK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
Hynix 2GB (1x 2GB) DDR3-1066 PC3-8500 1.5V DR x8 204-pin SODIMM RAM Module Classification_ram-ddr2-800-eudimm-2gb-1x-dr 5V Technology DDR Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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