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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 16-chip 256M x8 Pieces in Kit 1 Compatibility
This 512MB (1x 512MB) DDR2 400 MT/s Single rank
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 288-pin EUDIMM Ranks Single rank Configuration x8 based Pieces in Kit 2 Compatibility
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Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-eudimm-1gb-1x 5V Technology DDR3L Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and
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