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2xCT16G4RFD4266 Capacity 32GB (2x 16GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
HMA41GR7AFR4N-UH Capacity 8GB (1x 8GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
2xMT18KSF1G72AZ-1G6E1 Capacity 16GB (2x 8GB) Brand Micron Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration x8 Pieces in Kit 1 Compatibility
Samsung 128GB (2x 64GB) DDR4-2666 PC4-21300 1.2V QR x4 ECC Load Reduced 288-pin LRDIMM RAM Kit Model_iMAC_13_1 2xCT16G4RFD4266 Capacity 32GB (2x 16GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 128GB (2x 64GB) DDR4 2666 MT s 288 pin LRDIMM RAM kit from Samsung . This Quad rank, x4 configuration RAM kit is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM kit also operates at a standard voltage of 1. 2V and is designed to
