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8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 128Mx8 Pieces in Kit 2 Compatibility
M378B5273DH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
MT36JSF1G72PZ-1G9K1 Capacity 8GB (1x 8GB) Brand Micron Speed DDR3-1866 - 1866MT/s - PC3-14900 Voltage 1
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 64GB (1x 64GB) DDR4 2400 MT/s 288-pin LRDIMM RAM module from Hynix
Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1333-rdimm-16gb-2x-dr 8V Technology DDR2 Error CorrectionProduct Overview This 8GB (1x 8GB) DDR3 1600 MT s RAM module from Micron is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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