Hynix 8GB (1x 8GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr4-2133-rdimm-32gb-2x-dr M393A1G40DB1-CRC4Q Capacity 8GB (1x 8GB)

M393A1G40DB1-CRC4Q Capacity 8GB (1x 8GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Pieces in Kit 1 Compatibility

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 288-pin UDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

2xM471B2873EH1-CF8 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Hynix 8GB (1x 8GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr4-2133-rdimm-32gb-2x-dr M393A1G40DB1-CRC4Q Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1333 MT s 240 pin RDIMM RAM module from Hynix . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to