Hynix 512MB (1x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Module Classification_ram-ddr3-1066-rdimm-8gb-1x-qr 5V Technology DDR3L Error Correction

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 36-chip 256Mx4 Pieces in Kit 1 Compatibility

but the effective rate is 266 megatransfers per second (MT/s) because there are 133 million rising edges per second and 133 million falling edges per second of a clock signal running at 133 MHz

HMT125U6BFR8C-H9 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Pieces in Kit 2 Compatibility

Hynix 512MB (1x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Module Classification_ram-ddr3-1066-rdimm-8gb-1x-qr 5V Technology DDR3L Error CorrectionProduct Overview This 512MB (1x 512MB) DDR2 533 MT s Dual rank, x16 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 533 MT s with an overall transfer rate of PC2 4200. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL4, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical