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Samsung 16GB (2x 8GB) DDR3-1600 PC3-12800 1.5V DR x8 ECC 240-pin EUDIMM RAM Kit Classification_ram-ddr3-1600-eudimm-8gb-1x-dr-fm Dramatically improve performance and handle

SKU 1431085511
4.4
USD140.00 USD161.00

Pay in 4 interest-free payments of $35.00 Learn more

Shipping Estimate
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Ships within 48 hours · Estimated delivery Aug 15 - Aug 20

Description

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (2x 2GB) DDR2 800 MT/s 240-pin EUDIMM RAM kit from Hynix

but the effective rate is 266 megatransfers per second (MT/s) because there are 133 million rising edges per second and 133 million falling edges per second of a clock signal running at 133 MHz

CT16G4RFD4213 Capacity 16GB (1x 16GB) Brand Crucial Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

2xCDG Capacity 4GB (2x 2GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

Samsung 16GB (2x 8GB) DDR3-1600 PC3-12800 1.5V DR x8 ECC 240-pin EUDIMM RAM Kit Classification_ram-ddr3-1600-eudimm-8gb-1x-dr-fm Dramatically improve performance and handleProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR3 1600 MT s 240 pin EUDIMM RAM kit from Samsung . This Dual rank, x8 configuration RAM kit is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM kit also operates at a standard voltage of 1. 5V and is designed to

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  • Final sale items are not eligible for returns or exchanges.
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