Samsung 4GB (1x 4GB) DDR2-667 PC2-5300 1.8V DR x4 ECC Fully Buffered 240-pin FB-DIMM RAM Module Signal Processing_Load Reduced 2V with a CAS Latency

2V with a CAS Latency of CL17

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility

2xMTA18ASF2G72HZ-2G3B1 Capacity 32GB (2x 16GB) Brand Micron Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

M378B5673FH0-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Samsung 4GB (1x 4GB) DDR2-667 PC2-5300 1.8V DR x4 ECC Fully Buffered 240-pin FB-DIMM RAM Module Signal Processing_Load Reduced 2V with a CAS LatencyProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR2 667 MT s 240 pin FB DIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR2 compatible systems and operates at 667 MT s with an overall transfer rate of PC2 5300. This RAM module also operates at a standard voltage of 1. 8V and is designed